MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC FDS6984S
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Description:
MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
FDS6984S（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9023,Price reference "real-time change" China/Hongkong。 FDS6984S package/specs, Download FDS6984S、Datasheet。
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